parameter symbol value unit collector-base voltage v c b o 100 v collector-emitter voltage v c e o 100 v emitter-base voltage v e b o 5 v collector current i c 8.0 a base current i b 0.1 a total dissipation at p t o t 50 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c MJD122 parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c e = 100v, i b = 0 0.5 ma collector cut-off current i c b o v c b = 100v, i e = 0 0.2 ma emitter cut-off current i e b o v e b = 5.0v, i c = 0 2.0 ma collector-emitter sustaining voltage v c e o i c = 30ma, i b = 0 100 v dc current gain h f e ( 1 ) v c e = 5.0v, i c = 2.0a 1000 h f e ( 2 ) v c e = 3.0v, i c = 3.0a 1000 collector-emitter saturation voltage v c e ( s a t ) i c = 3.0a, i b = 12ma 1.5 v i c = 5.0a, i b = 20ma 2.5 base-emitter voltage v b e ( o n ) v c e = 3.0v, i c = 3.0a 2.0 v complementary silicon power darlington transistors 1 medium power darlington tr 2 complement to mjd127 electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o hammer drivers,audio amplifiers applications power linear and switching applications to-252 b e c tiger electronic co.,ltd
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